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BAW75 and BAW76
Small-Signal Diode Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode Fast switching diodes.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(TA=25oC unless otherwise noted.)
Parameter Reverse voltage Peak reverse voltage Rectified current (Average) half wave rectification with resist. load at Tamb=25oC and f>50Hz Surge forward current at t<1us and Tj=25oC Power dissipation at Tamb=25oC Thermal resistance junction to ambient air Junction temperature Storage temperature range BAW75 BAW76 BAW75 BAW76 Symbol VR VRM IO IFSM Ptot RJA Tj TS Limit 25 50 35 75 150
(1)
Unit Volts Volts mA Amps mW
o
2.0 500 0.35
(1)
(1)
C/W
o
175 -65 to +175
C C
o
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
635
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter Forward voltage BAW75 BAW76 BAW75 BAW75 BAW76 BAW76 BAW75 BAW76 BAW75 BAW76 Symbol VF Test Condition at IF=30mA at IF=100mA VR=25V VR=25V, Tj=150OC VR=50V VR=50V, Tj=150OC tested with 5uA pulses VF=VR=0V IF=10mA, IR=10mA Irr=1mA IF=10mA, IR=1mA VR=6V, RL=100 Min. 35 75 Typ. Max. 1.0 1.0 100 100 100 100 4.0 2.0 4 ns 2 Unit Volt nA uA nA uA Volts pF
Leakage current
IR
Reverse breakdown voltage Capacitance
V(BR)R Ctot
Reverse recovery time
trr
636
RATINGS AND CHARACTERISTIC CURVES
(TA = 25oC unless otherwise noted.)
637
RATINGS AND CHARACTERISTIC CURVES
(TA = 25oC unless otherwise noted.)
638

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